PART |
Description |
Maker |
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
SGM2014AM |
GaAs N-channel Dual Gate MES FET From old datasheet system
|
Sony
|
3SK165 3SK165A 3SK165A-0 3SK165A-1 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
Sony Corporation
|
3SK309 |
Silicon N Channel MOS FET GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
3SK239A |
From old datasheet system Silicon NPN Triple Diffused GaAs Dual Gate MES FET
|
Hitachi Semiconductor
|
GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET 0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|